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MRF5812R1

Microsemi Corporation

MRF5812R1

RF BJT Transistors

RoHS: Compliant

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Specifications

Lifecycle Status
OBSOLETE (Last Updated: 1 month ago)
Transistor Element Material
SILICON
Parça Durumu
Obsolete
Collector Emitter Voltage Vceo
15V
Frequency Transition
5GHz
Montaj Tipi
Surface Mount
Collectoremitter Breakdown Voltage
15V
Transition Frequency
5000MHz
Max Power Dissipation
1.25W
Configuration
SINGLE
Collector Base Voltage Vcbo
30V
Dc Current Gain Hfe Min Ic Vce
50 @ 50mA 5V
ECCN Kodu
EAR99
Power Max
1.25W
Transistor Application
AMPLIFIER
Montaj
Surface Mount
Polaritychannel Type
NPN
Operating Temperature Max
150°C
Pin Sayısı
8
Pin Sayısı
8
Collectorbase Capacitancemax
2pF
Radyasyon Dayanımı
No
Noise Figure Db Typ F
2dB ~ 3dB @ 500MHz
Transistor Type
NPN
Gain
13dB ~ 15.5dB
Highest Frequency Band
ULTRA HIGH FREQUENCY B
RoHS Durumu
RoHS Compliant
Kılıf / Paket
8-SOIC (0.154, 3.90mm Width)
Terminal Sayısı
8
Terminal Kaplaması
TIN LEAD
Max Collector Current
200mA
Terminal Formu
GULL WING
JESD-609 Kodu
e0
Ambalaj
Tape & Reel (TR)
Terminal Pozisyonu
DUAL
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2004

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