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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Highest Frequency Band
- ULTRA HIGH FREQUENCY B
- Transistor Type
- NPN
- Gain
- 13dB ~ 15.5dB
- Tepe Reflow Süresi (maks. sn)
- 40
- Radyasyon Dayanımı
- No
- Noise Figure Db Typ F
- 2dB ~ 3dB @ 500MHz
- Collectorbase Capacitancemax
- 2pF
- Pin Sayısı
- 8
- Polaritychannel Type
- NPN
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Transistor Application
- AMPLIFIER
- Kurşunsuz Kodu
- yes
- Yayın Yılı
- 2004
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
- Ambalaj
- Bulk
- Terminal Pozisyonu
- DUAL
- Number Of Elements
- 1
- Terminal Formu
- GULL WING
- Max Collector Current
- 200mA
- Terminal Kaplaması
- MATTE TIN
- RoHS Durumu
- RoHS Compliant
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Sayısı
- 8
- Max Power Dissipation
- 1.25W
- Transition Frequency
- 5000MHz
- Montaj Tipi
- Surface Mount
- Collectoremitter Breakdown Voltage
- 15V
- Frequency Transition
- 5GHz
- Collector Emitter Voltage Vceo
- 15V
- Parça Durumu
- Obsolete
- Transistor Element Material
- SILICON
- Lifecycle Status
- OBSOLETE (Last Updated: 3 weeks ago)
- Power Max
- 1.25W
- ECCN Kodu
- EAR99
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collector Base Voltage Vcbo
- 30V
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 50mA 5V
- Configuration
- SINGLE
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