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MRF559G

Microsemi Corporation

MRF559G

RF BJT Transistors

RoHS: Compliant

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Specifications

Polaritychannel Type
NPN
Pin Sayısı
4
Pin Sayısı
4
Montaj
Surface Mount
Radyasyon Dayanımı
No
Output Power
5W
Transistor Type
NPN
Gain
9.5dB
Max Collector Current
150mA
Kılıf / Paket
Micro-X ceramic (84C)
RoHS Durumu
RoHS Compliant
Yayın Yılı
2004
Maks. Çalışma Sıcaklığı
150°C
Nem Hassasiyeti (MSL)
1 (Unlimited)
Ambalaj
Bulk
Collector Emitter Voltage Vceo
16V
Lifecycle Status
OBSOLETE (Last Updated: 2 weeks ago)
Parça Durumu
Obsolete
Max Power Dissipation
2W
Min. Çalışma Sıcaklığı
-65°C
Frequency Transition
870MHz
Collectoremitter Breakdown Voltage
16V
Montaj Tipi
Surface Mount
Kurşunsuz
Lead Free
Configuration
Single
Collector Base Voltage Vcbo
36V
Dc Current Gain Hfe Min Ic Vce
30 @ 50mA 10V

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