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MRF555

Microsemi Corporation

MRF555

RF BJT Transistors

RoHS: Compliant

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Specifications

Gain
11dB ~ 13dB
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Montaj
Surface Mount
Kurşunsuz Kodu
no
Dc Current Gainmin Hfe
50
Pin Sayısı
4
JESD-609 Kodu
e0
Nem Hassasiyeti (MSL)
1 (Unlimited)
Package Style
DISK BUTTON
Yayın Yılı
2000
Terminal Sayısı
4
RoHS Durumu
RoHS Compliant
Terminal Formu
FLAT
Part Life Cycle Code
Transferred
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Risk Rank
5.36
Case Connection
COLLECTOR
Reflow Temperaturemax S
NOT SPECIFIED
Yüzey Montaj
YES
Power Max
3W
Ihs Manufacturer
MICROSEMI CORP
Power Dissipationmax Abs
3 W
Dc Current Gain Hfe Min Ic Vce
30 @ 250mA 5V
Transistor Type
NPN
Collectorbase Capacitancemax
5.5pF
Radyasyon Dayanımı
No
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Collector Currentmax Ic
0.5 A
Package Shape
ROUND
Polaritychannel Type
NPN
Terminal Pozisyonu
RADIAL
Ambalaj
Bulk
Number Of Elements
1
Rohs Code
No
REACH Uyumluluk Kodu
not_compliant
Jesd30 Code
O-PRDB-F4
Number Of Terminals
4
Kılıf / Paket
Power Macro
Max Collector Current
500mA

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