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MRF553G

Microsemi Corporation

MRF553G

RF BJT Transistors

RoHS: Compliant

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Specifications

Kurşunsuz
Lead Free
Power Dissipation
3W
Configuration
Single
Collector Base Voltage Vcbo
36V
Dc Current Gain Hfe Min Ic Vce
30 @ 250mA 5V
Power Dissipationmax Abs
3 W
Üretici Parça No
MRF553G
Ihs Manufacturer
MICROSEMI CORP
Collector Emitter Voltage Vceo
16V
Lifecycle Status
Obsolete (Last Updated: 2 months ago)
Polarity
NPN
RoHS
Compliant
Yüzey Montaj
YES
Parça Durumu
Obsolete
Max Power Dissipation
3W
Risk Rank
5.55
Frequency Transition
175MHz
Montaj Tipi
Surface Mount
Collectoremitter Breakdown Voltage
16V
Max Collector Current
500mA
Part Life Cycle Code
Transferred
Kılıf / Paket
Power Macro
RoHS Durumu
RoHS Compliant
Package Description
,
Emitter Base Voltage Vebo
4V
Yayın Yılı
2004
REACH Uyumluluk Kodu
unknown
Rohs Code
Yes
Ambalaj
Bulk
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Currentmax Ic
0.5 A
Polaritychannel Type
NPN
Pin Sayısı
4
Pin Sayısı
4
Dc Current Gainmin Hfe
30
Montaj
Surface Mount
Output Power
1.5W
Radyasyon Dayanımı
No
Transistor Type
NPN

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