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Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Technology
- Si
- Case Connection
- COLLECTOR
- Power Max
- 3W
- Collector Emitter Voltage Vceo Max
- 16 V
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 250mA 5V
- Gain
- 11.5dB
- Highest Frequency Band
- VERY HIGH FREQUENCY B
- Maks. Çalışma Sıcaklığı
- + 200 C
- Kurşunsuz Kodu
- no
- Montaj
- Surface Mount
- Ürün Tipi
- RF Bipolar Transistors
- Pin Sayısı
- 4
- Dc Collectorbase Gain Hfe Min
- 30
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e0
- Emitter Base Voltage Vebo
- 4 V
- Montaj Stili
- SMD/SMT
- Fabrika Paket Adedi
- 1
- Terminal Sayısı
- 4
- RoHS Durumu
- RoHS Compliant
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Terminal Formu
- FLAT
- Frequency Transition
- 175MHz
- Collectoremitter Breakdown Voltage
- 16V
- Max Power Dissipation
- 3W
- Lifecycle Status
- OBSOLETE (Last Updated: 3 weeks ago)
- RoHS
- Details
- Parça Durumu
- Obsolete
- Transistor Element Material
- SILICON
- Collector Emitter Voltage Vceo
- 16V
- Pd Power Dissipation
- 3 W
- Operating Frequency
- 175 MHz
- Configuration
- SINGLE
- Collector Base Voltage Vcbo
- 36V
- ECCN Kodu
- EAR99
- Radyasyon Dayanımı
- No
- Collectorbase Capacitancemax
- 20pF
- Transistor Type
- NPN
- Minimum Operating Temperature
- - 65 C
- Transistor Polarity
- NPN
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