Volume pricing
- 1+ pcs$33.20
- 10+ pcs$31.32
- 100+ pcs$29.55
- 500+ pcs$27.88
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 200mW
- Fabrika Tedarik Süresi
- 23 Weeks
- Configuration
- SINGLE
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 5mA 10V
- HTS Kodu
- 8541.21.00.95
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- ECCN Kodu
- EAR99
- Montaj Tipi
- Through Hole
- Voltage Collector Emitter Breakdown Max
- 30V
- Case Connection
- ISOLATED
- Lifecycle Status
- IN PRODUCTION (Last Updated: 6 months ago)
- Yüzey Montaj
- NO
- Parça Durumu
- Discontinued
- Transistor Element Material
- SILICON
- Jesd30 Code
- O-MBCY-W4
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- JESD-609 Kodu
- e0
- Ambalaj
- Bulk
- Terminal Pozisyonu
- BOTTOM
- Yayın Yılı
- 2007
- Currentcollector Ic Max
- 30mA
- RoHS Durumu
- Non-RoHS Compliant
- Kılıf / Paket
- TO-72-3 Metal Can
- Terminal Sayısı
- 4
- Çalışma Sıcaklığı
- -65°C~200°C TJ
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Terminal Formu
- WIRE
- Noise Figure Db Typ F
- 3.5dB @ 450MHz
- Collectorbase Capacitancemax
- 0.8pF
- Transistor Type
- PNP
- Gain
- 25dB
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Highest Frequency Band
- ULTRA HIGH FREQUENCY B
- Qualification Status
- Qualified
- Reference Standard
- MIL-19500/426
- Transistor Application
- AMPLIFIER
- Polaritychannel Type
- PNP
- Pin Sayısı
- 4
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