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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 60V
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- RoHS
- N
- Max Power Dissipation
- 350mW
- Voltage Collector Emitter Breakdown Max
- 60V
- Montaj Tipi
- Through Hole
- ECCN Kodu
- EAR99
- HTS Kodu
- 8541.21.00.95
- Collector Base Voltage Vcbo
- 70V
- Configuration
- SEPARATE, 2 ELEMENTS
- Fabrika Tedarik Süresi
- 23 Weeks
- Pin Sayısı
- 8
- Polaritychannel Type
- NPN
- Qualification Status
- Qualified
- Paket
- Bulk
- Transistor Polarity
- Dual NPN
- Current Collector Cutoff Max
- 10μA ICBO
- Transistor Type
- 2 NPN (Dual)
- Radyasyon Dayanımı
- No
- Max Collector Current
- 30mA
- Kılıf / Paket
- TO-78-6 Metal Can
- Seri
- Military, MIL-PRF-19500/355
- Ambalaj
- Bulk
- Number Of Elements
- 2
- Terminal Pozisyonu
- BOTTOM
- Technology
- Si
- Dc Current Gain Hfe Min Ic Vce
- 300 @ 1mA 5V
- Ürün Durumu
- Active
- Power Max
- 350mW
- Tedarikçi Cihaz Paketi
- TO-78-6
- Pin Sayısı
- 6
- Reference Standard
- MIL-19500/355J
- Ürün Tipi
- BJTs - Bipolar Transistors
- Montaj
- Through Hole
- Kurşunsuz Kodu
- no
- Vce Saturation Max Ib Ic
- 300mV @ 100μA, 1mA
- Terminal Formu
- WIRE
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Çalışma Sıcaklığı
- 200°C TJ
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