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Microsemi Corporation

JANTXV2N2857UB

RF BJT Transistors

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Specifications

Jesd30 Code
R-CDSO-N3
Terminal Pozisyonu
DUAL
Ambalaj
Bulk
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2007
Terminal Sayısı
3
Kılıf / Paket
3-SMD, No Lead
RoHS Durumu
Non-RoHS Compliant
Currentcollector Ic Max
40mA
Çalışma Sıcaklığı
-65°C~200°C TJ
Continuous Collector Current
40
Max Collector Current
40mA
Collectorbase Capacitancemax
1pF
Noise Figure Db Typ F
4.5dB @ 450MHz
Radyasyon Dayanımı
No
Transistor Type
NPN
Gain
21dB
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Qualification Status
Qualified
Transistor Polarity
NPN
Reference Standard
MIL-19500/343
Polaritychannel Type
NPN
Pin Sayısı
3
Fabrika Tedarik Süresi
23 Weeks
Configuration
SINGLE
Collector Base Voltage Vcbo
30V
Dc Current Gain Hfe Min Ic Vce
30 @ 3mA 1V
HTS Kodu
8541.21.00.95
ECCN Kodu
EAR99
Montaj Tipi
Surface Mount
Max Power Dissipation
200mW
Transistor Element Material
SILICON
Yüzey Montaj
YES
Parça Durumu
Obsolete
Collector Emitter Voltage Vceo
15V

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