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Microsemi Corporation

JANTX2N6990

Arrays BJT Transistors

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Specifications

Collector Emitter Voltage Vceo
50V
Dc Current Gain Hfe Min Ic Vce
100 @ 150mA 10V
Viewing Angle
120°
Terminal Pozisyonu
DUAL
Voltage Forward Vf Typ
2.3V
Tedarikçi Cihaz Paketi
SMD
JESD-609 Kodu
e0
Luminous Flux Currenttemperature
53lm (45lm ~ 61lm)
Transistor Element Material
SILICON
Current Max
1A
Terminal Sayısı
14
Collectoremitter Breakdown Voltage
50V
Vce Saturation Max Ib Ic
1V @ 50mA, 500mA
Transistor Application
SWITCHING
ECCN Kodu
EAR99
Max Collector Current
800mA
Contact Plating
Lead, Tin
Pin Sayısı
14
Kılıf / Paket
14-Flatpack
Max Power Dissipation
400mW
Turn On Timemax Ton
35ns
Lumenswatt Current Test
58 lm/W
Ürün Durumu
Obsolete
Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Seri
Military, MIL-PRF-19500/559
Current Test
400mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
6V
Parça Durumu
Discontinued
Montaj
Surface Mount
Paket
Tape & Reel (TR)
Maks. Oturma Yüksekliği
0.075 (1.90mm)
Boyut / Ölçü
0.276 L x 0.236 W (7.00mm x 6.00mm)
Kurşunsuz Kodu
no
Ambalaj
Bulk
Transistor Type
4 NPN (Quad)
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Current Collector Cutoff Max
10μA ICBO
Configuration
SINGLE
Reference Standard
MIL-19500/559

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