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Microsemi Corporation

JANTX2N3810U

Arrays BJT Transistors

In StockRoHS: Compliant

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Specifications

Max Collector Current
50mA
Max Power Dissipation
350mW
Terminal Sayısı
6
Reference Standard
MIL-19500
Pin Sayısı
6
Yayın Yılı
2007
Tepe Reflow Süresi (maks. sn)
20
Tepe Reflow Sıcaklığı (°C)
235
Radyasyon Dayanımı
No
Current Collector Cutoff Max
10μA ICBO
Seri
Military, MIL-PRF-19500/336
Ambalaj
Bulk
Fabrika Tedarik Süresi
23 Weeks
Collector Emitter Voltage Vceo
60V
Collector Base Voltage Vcbo
60V
Parça Durumu
Active
RoHS Durumu
Non-RoHS Compliant
Polarity
PNP
Number Of Elements
2
Çalışma Sıcaklığı
-65°C~200°C TJ
Emitter Base Voltage Vebo
5V
Qualification Status
Qualified
Dc Current Gain Hfe Min Ic Vce
150 @ 1mA 5V
Power Dissipation
350mW
JESD-609 Kodu
e0
Montaj Tipi
Through Hole
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Transistor Element Material
SILICON
Kılıf / Paket
TO-78-6 Metal Can
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Type
2 PNP (Dual)
Collectoremitter Breakdown Voltage
60V
Montaj
Surface Mount, Through Hole
ECCN Kodu
EAR99
Vce Saturation Max Ib Ic
250mV @ 100μA, 1mA
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Kurşunsuz Kodu
no

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