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JANTX2N2857

Microsemi Corporation

JANTX2N2857

RF BJT Transistors

RoHS: Compliant

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Specifications

Yayın Yılı
2007
Pin Sayısı
4
Max Collector Current
40mA
Terminal Pozisyonu
BOTTOM
Max Power Dissipation
200mW
Terminal Sayısı
4
Radyasyon Dayanımı
No
Seri
Military, MIL-PRF-19500/343
Ambalaj
Bulk
Fabrika Tedarik Süresi
23 Weeks
Collector Emitter Voltage Vceo
15V
Collector Base Voltage Vcbo
30V
Polaritychannel Type
NPN
Parça Durumu
Obsolete
Gain
12.5dB ~ 21dB @ 450MHz
Number Of Elements
1
RoHS Durumu
Non-RoHS Compliant
Çalışma Sıcaklığı
-65°C~200°C TJ
Terminal Formu
WIRE
Dc Current Gain Hfe Min Ic Vce
30 @ 3mA 1V
Power Dissipation
200mW
Emitter Base Voltage Vebo
3V
Qualification Status
Qualified
JESD-609 Kodu
e0
Montaj Tipi
Through Hole
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kılıf / Paket
TO-72-3 Metal Can
Transistor Element Material
SILICON
Noise Figure Db Typ F
4.5dB @ 450MHz
Configuration
SINGLE
Montaj
Through Hole
Frequency Transition
500MHz
Transistor Type
NPN
Frekans
1.6GHz
Contact Plating
Lead, Tin
ECCN Kodu
EAR99
Terminal Kaplaması
Tin/Lead (Sn/Pb)

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