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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 350mW
- Collectoremitter Breakdown Voltage
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- WIRE
- Vce Saturation Max Ib Ic
- 250mV @ 100μA, 1mA
- Montaj
- Through Hole
- Transistor Type
- 2 PNP (Dual)
- Parça Durumu
- Obsolete
- Çalışma Sıcaklığı
- -65°C~200°C TJ
- Collector Base Voltage Vcbo
- 60V
- Terminal Sayısı
- 6
- Collector Emitter Voltage Vceo
- 250mV
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- no
- Yayın Yılı
- 2007
- RoHS Durumu
- Non-RoHS Compliant
- Ambalaj
- Bulk
- Dc Current Gain Hfe Min Ic Vce
- 300 @ 1mA 5V
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 350mW
- Current Collector Cutoff Max
- 10μA ICBO
- JESD-609 Kodu
- e0
- Max Collector Current
- 50mA
- Pin Sayısı
- 8
- Kılıf / Paket
- TO-78-6 Metal Can
- HTS Kodu
- 8541.21.00.95
- Terminal Pozisyonu
- BOTTOM
- Pin Sayısı
- 6
- Configuration
- SEPARATE, 2 ELEMENTS
- Seri
- Military, MIL-PRF-19500/336
- Montaj Tipi
- Through Hole
- Terminal Kaplaması
- TIN LEAD
- Reference Standard
- MIL-19500
- Polaritychannel Type
- PNP
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
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