Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Output
- 750W
- Configuration
- SINGLE
- Gate To Source Voltage Vgs
- 30V
- Ürün Durumu
- Active
- Test Voltage
- 125 V
- Forward Transconductance Min
- 6 mS
- Kurşunsuz Kodu
- yes
- Operating Temperature Range
- - 55 C to + 175 C
- Tedarikçi Cihaz Paketi
- T-1
- Minimum Operating Temperature
- - 55 C
- Power Dissipationmax Abs
- 1500 W
- Part Life Cycle Code
- Active
- Number Of Terminals
- 6
- Ihs Manufacturer
- MICROSEMI CORP
- Drain Currentmax Id
- 60 A
- Terminal Formu
- FLAT
- Vds Drainsource Breakdown Voltage
- 500 V
- Polaritychannel Type
- N-CHANNEL
- Yayın Yılı
- 1998
- Vgs Th Gatesource Threshold Voltage
- 5 V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gain
- 19dB
- Transistor Element Material
- SILICON
- Operating Temperaturemax
- 175 °C
- Fabrika Tedarik Süresi
- 27 Weeks
- Terminal Pozisyonu
- DUAL
- Radyasyon Dayanımı
- No
- Number Of Elements
- 1
- Operating Frequency
- 40 MHz
- Fall Time
- 10 ns
- Voltage Test
- 125V
- Min. Çalışma Sıcaklığı
- -55°C
- REACH Uyumluluk Kodu
- compliant
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- RoHS
- Details
- Yüzey Montaj
- YES
- Frekans
- 27.12MHz
- Transistor Type
- N-Channel
- Akım Değeri
- 60A
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