Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 500V
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Kılıf / Paket
- SP1
- Gate To Source Voltage Vgs
- 30V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time
- 29 ns
- Terminal Formu
- UNSPECIFIED
- Rise Time
- 35ns
- Gate Charge Qg Max Vgs
- 170nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Input Capacitance Ciss Max Vds
- 5448pF @ 25V
- Transistor Application
- SWITCHING
- Pin Sayısı
- 12
- Additional Feature
- AVALANCHE RATED
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 36 Weeks
- Yayın Yılı
- 2007
- Max Power Dissipation
- 208W
- Pin Sayısı
- 1
- Turn Off Delay Time
- 80 ns
- Continuous Drain Current Id
- 25A
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
- Ambalaj
- Bulk
- Fall Time Typ
- 26 ns
- Rds On Max Id Vgs
- 180m Ω @ 21A, 10V
- Montaj Tipi
- Chassis Mount
- Ds Breakdown Voltagemin
- 500V
- Terminal Pozisyonu
- UPPER
- Fet Type
- 4 N-Channel (H-Bridge)
- RoHS Durumu
- RoHS Compliant
- Montaj
- Chassis Mount, Screw
- Number Of Elements
- 4
- Case Connection
- ISOLATED
- Fet Feature
- Standard
- Configuration
- COMPLEX
- Terminal Sayısı
- 12
- Vgsth Max Id
- 5V @ 1mA
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