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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Channels
- 1
- Uzunluk
- 73.4mm
- Kurşunsuz Kodu
- yes
- Tedarikçi Cihaz Paketi
- SP3
- Seri
- SiT8208
- Power Dissipation
- 208W
- Vgsth Max Id
- 5V @ 1mA
- Configuration
- 4 N-Channel (Half Bridge)
- Montaj Tipi
- Chassis Mount
- Genişlik
- 40.8mm
- Fall Time Typ
- 41 ns
- Terminal Pozisyonu
- UPPER
- Jesd30 Code
- R-XUFM-X25
- RoHS Durumu
- RoHS Compliant
- Frekans
- 7.3728 MHz
- Pd Power Dissipation
- 208 W
- Tip
- XO (Standard)
- Technology
- MOSFET (Metal Oxide)
- Additional Feature
- AVALANCHE RATED
- Pin Sayısı
- 25
- Transistor Application
- SWITCHING
- Typical Turnoff Delay Time
- 50 ns
- Yayın Yılı
- 2006
- Channel Type
- Dual N
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Ürün Durumu
- Active
- Parça Durumu
- Active
- Base Resonator
- MEMS
- Paket
- Strip
- Ambalaj
- Bulk
- Radyasyon Dayanımı
- No
- Output
- LVCMOS, LVTTL
- Kılıf / Paket
- SP3
- Transistor Element Material
- SILICON
- Terminal Formu
- UNSPECIFIED
- Vgs Th Gatesource Threshold Voltage
- 3 V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Id Continuous Drain Current
- 26 A
- Case Connection
- ISOLATED
- Number Of Elements
- 4
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