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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 500V
- Kılıf / Paket
- SP4
- Gate To Source Voltage Vgs
- 30V
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Terminal Formu
- UNSPECIFIED
- Turn On Delay Time
- 18 ns
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 11200pF @ 25V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- JESD-609 Kodu
- e1
- Gate Charge Qg Max Vgs
- 246nC @ 10V
- Rise Time
- 35ns
- Pin Sayısı
- 10
- Additional Feature
- AVALANCHE ENERGY RATED
- Transistor Application
- SWITCHING
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 16 Weeks
- Pin Sayısı
- 4
- Max Power Dissipation
- 694W
- Ambalaj
- Bulk
- ECCN Kodu
- EAR99
- Turn Off Delay Time
- 87 ns
- Continuous Drain Current Id
- 90A
- Radyasyon Dayanımı
- No
- Montaj Tipi
- Chassis Mount
- Rds On Max Id Vgs
- 45m Ω @ 45A, 10V
- Fall Time Typ
- 77 ns
- Pulsed Drain Currentmax Idm
- 360A
- Terminal Pozisyonu
- UPPER
- Ds Breakdown Voltagemin
- 500V
- Jesd30 Code
- R-XUFM-X10
- RoHS Durumu
- RoHS Compliant
- Fet Type
- 2 N-Channel (Half Bridge)
- Montaj
- Chassis Mount, Screw
- Number Of Elements
- 2
- Case Connection
- ISOLATED
- Terminal Kaplaması
- TIN SILVER COPPER
- Fet Feature
- Standard
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