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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 40000pF @ 25V
- JESD-609 Kodu
- e1
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 1360nC @ 10V
- Rise Time
- 240ns
- Terminal Formu
- UNSPECIFIED
- Turn On Delay Time
- 160 ns
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Kılıf / Paket
- SP6
- Gate To Source Voltage Vgs
- 30V
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- Drain To Source Voltage Vdss
- 100V
- Ambalaj
- Bulk
- ECCN Kodu
- EAR99
- Radyasyon Dayanımı
- No
- Continuous Drain Current Id
- 495A
- Turn Off Delay Time
- 500 ns
- Pin Sayısı
- 6
- Power Max
- 1250W
- Max Power Dissipation
- 1.25kW
- Yayın Yılı
- 2012
- Fabrika Tedarik Süresi
- 16 Weeks
- Parça Durumu
- Active
- Additional Feature
- AVALANCHE RATED
- Pin Sayısı
- 7
- Transistor Application
- SWITCHING
- Montaj
- Chassis Mount, Screw
- Avalanche Energy Rating Eas
- 3000 mJ
- RoHS Durumu
- RoHS Compliant
- Fet Type
- 2 N-Channel (Half Bridge)
- Pulsed Drain Currentmax Idm
- 1900A
- Terminal Pozisyonu
- UPPER
- Ds Breakdown Voltagemin
- 100V
- Jesd30 Code
- R-XUFM-X7
- Montaj Tipi
- Chassis Mount
- Rds On Max Id Vgs
- 2.5m Ω @ 200A, 10V
- Fall Time Typ
- 160 ns
- Power Dissipation
- 1.25kW
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