APTM100A13SG

Specifications

Fet Feature

Standard

Case Connection

ISOLATED

Number Of Elements

2

Terminal Kaplaması

TIN SILVER COPPER

Tradename

POWER MOS 7

Terminal Sayısı

7

Montaj Stili

Screw Mount

Birim Ağırlık

3.880136 oz

Rds On Max Id Vgs

156m Ω @ 32.5A, 10V

Minimum Operating Temperature

- 40 C

RoHS

Details

Montaj

Chassis Mount, Screw

Rds On Drainsource Resistance

130 mOhms

Fet Type

2 N-Channel (Half Bridge)

Fabrika Tedarik Süresi

16 Weeks

Ürün Tipi

Discrete Semiconductor Modules

Turn Off Delay Time

50 ns

Continuous Drain Current Id

65A

ECCN Kodu

EAR99

Maks. Çalışma Sıcaklığı

+ 150 C

Current Continuous Drain Id25

65A

Pin Sayısı

6

Power Max

1250W

Max Power Dissipation

1.25kW

Fabrika Paket Adedi

1

Operating Mode

ENHANCEMENT MODE

Typical Turnon Delay Time

9 ns

Gate To Source Voltage Vgs

30V

Element Configuration

Single

Drain To Source Voltage Vdss

1000V 1kV

Temel Ürün No

APTM100

Vds Drainsource Breakdown Voltage

1 kV

Gate Charge Qg Max Vgs

562nC @ 10V

Rise Time

9ns

Input Capacitance Ciss Max Vds

15200pF @ 25V

Transistor Polarity

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

21.9mm

Çalışma Sıcaklığı

-40°C~150°C TJ

JESD-609 Kodu

e1