APTGV50H120BTPG

Specifications

Terminal Formu

UNSPECIFIED

Input Capacitance

3.6nF

JESD-609 Kodu

e1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Collector Cutoff Max

250μA

Vceon Max Vge Ic

2.1V @ 15V, 50A

Collectoremitter Breakdown Voltage

1.2kV

Operating Temperature Max

150°C

Kılıf / Paket

SP6

Transistor Element Material

SILICON

Input Capacitance Cies Vce

3.6nF @ 25V

Voltage Collector Emitter Breakdown Max

1200V

Pin Sayısı

6

Power Max

270W

Max Power Dissipation

270W

ECCN Kodu

EAR99

Igbt Type

NPT, Trench Field Stop

Pin Sayısı

21

Parça Durumu

Obsolete

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turn On Time

140 ns

Ntc Thermistor

Yes

RoHS Durumu

RoHS Compliant

Montaj

Chassis Mount, Screw

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL

Input

Standard

Gateemitter Voltagemax

20V

Montaj Tipi

Chassis Mount

Terminal Pozisyonu

UPPER

Qualification Status

Not Qualified

Jesd30 Code

R-XUFM-X21

Turn Off Timenom Toff

610 ns

Max Collector Current

75A

Terminal Sayısı

21

Configuration

Boost Chopper, Full Bridge

Case Connection

ISOLATED

Number Of Elements

5

Terminal Kaplaması

TIN SILVER COPPER

Collector Emitter Voltage Vceo

2.1V