APTGTQ100H65T3G

Specifications

RoHS Durumu

RoHS Compliant

Operating Temperaturemax

175 °C

Polaritychannel Type

N-CHANNEL

Pd Power Dissipation

250 W

Operating Temperaturemin

-40 °C

Montaj Tipi

Chassis Mount

Gateemitter Voltagemax

20 V

Terminal Pozisyonu

UPPER

Jesd30 Code

R-XUFM-X25

Tedarikçi Cihaz Paketi

SP3F

Configuration

Full Bridge

Terminal Formu

UNSPECIFIED

Vcesatmax

2.2 V

Current Collector Cutoff Max

100μA

Ihs Manufacturer

MICROSEMI CORP

Kılıf / Paket

Module

Lifecycle Status

IN PRODUCTION (Last Updated: 1 month ago)

Transistor Element Material

SILICON

Maximum Gate Emitter Voltage

20 V

Input Capacitance Cies Vce

6nF @ 25V

Power Dissipationmax Abs

250 W

Paket

Bulk

Üretici Parça No

APTGTQ100H65T3G

Ambalaj

Tube

Risk Rank

5.73

Turnon Timenom Ton

35 ns

Transistor Application

MOTOR CONTROL

Package Shape

RECTANGULAR

Yayın Yılı

2012

Ürün Durumu

Active

Parça Durumu

Active

Ntc Thermistor

Yes

Collector Currentmax Ic

100 A

Collectoremitter Voltagemax

650 V

Input

Standard

Gateemitter Thr Voltagemax

4.7 V

Collector Emitter Voltage Vceo Max

650 V

Minimum Operating Temperature

- 40 C

Collectoremitter Saturation Voltage

1.65 V

Birim Ağırlık

3.880136 oz