APTGT75TL60T3G

Specifications

Transistor Application

POWER CONTROL

Pin Sayısı

25

Igbt Type

Trench Field Stop

Yayın Yılı

2011

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Ürün Durumu

Active

Ambalaj

Tube

Paket

Tube

Collectoremitter Breakdown Voltage

600V

Kılıf / Paket

SP3

Lifecycle Status

IN PRODUCTION (Last Updated: 3 weeks ago)

Input Capacitance Cies Vce

4.62nF @ 25V

Maximum Gate Emitter Voltage

20 V

Transistor Element Material

SILICON

Vcesatmax

1.9 V

Terminal Formu

UNSPECIFIED

Input Capacitance

4.62nF

Current Collector Cutoff Max

250μA

Collector Emitter Voltage Vceo

600V

Tedarikçi Cihaz Paketi

SP3

Configuration

Three Level Inverter

Montaj Tipi

Chassis Mount

Gateemitter Voltagemax

20V

Qualification Status

Not Qualified

Terminal Pozisyonu

UPPER

Max Collector Current

100A

Turn Off Timenom Toff

310 ns

Jesd30 Code

R-XUFM-X16

RoHS Durumu

RoHS Compliant

Turn On Time

170 ns

Pd Power Dissipation

250 W

Polaritychannel Type

N-CHANNEL

Fabrika Tedarik Süresi

36 Weeks

Max Power Dissipation

250W

Fabrika Paket Adedi

1

Voltage Collector Emitter Breakdown Max

600 V

Pin Sayısı

32

Power Max

250W

Maks. Çalışma Sıcaklığı

+ 100 C