APTGT75TDU120PG

Specifications

Vceon Max Vge Ic

2.1V @ 15V, 75A

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e1

Temel Ürün No

APTGT75

Fabrika Tedarik Süresi

36 Weeks

Ürün Tipi

IGBT Transistors

ECCN Kodu

EAR99

Max Power Dissipation

350W

Fabrika Paket Adedi

1

Power Max

350W

Pin Sayısı

6

Voltage Collector Emitter Breakdown Max

1200V

Continuous Collector Current

100

Birim Ağırlık

3.880136 oz

Input

Standard

RoHS

Details

Montaj

Chassis Mount, Screw

Ntc Thermistor

No

Currentcollector Ic Max

100 A

Terminal Kaplaması

TIN SILVER COPPER

Number Of Elements

6

Case Connection

ISOLATED

Terminal Sayısı

21

Kılıf / Paket

SP6

Lifecycle Status

IN PRODUCTION (Last Updated: 3 weeks ago)

Operating Temperature Max

150°C

Input Capacitance Cies Vce

5.34nF @ 25V

Transistor Element Material

SILICON

Collectoremitter Breakdown Voltage

1.2kV

Current Collector Cutoff Max

250μA

Terminal Formu

UNSPECIFIED

Input Capacitance

5.34nF

Yayın Yılı

2006

Ürün Durumu

Active

Parça Durumu

Active

Transistor Application

POWER CONTROL

Igbt Type

Trench Field Stop

Additional Feature

AVALANCHE RATED

Pin Sayısı

21

Paket

Bulk