APTGT75DSK60T3G

Specifications

JESD-609 Kodu

e1

Çalışma Sıcaklığı

-40°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Collector Cutoff Max

250μA

Terminal Formu

UNSPECIFIED

Input Capacitance

4.62nF

Kılıf / Paket

SP3

Transistor Element Material

SILICON

Input Capacitance Cies Vce

4.62nF @ 25V

Vceon Max Vge Ic

1.9V @ 15V, 75A

Element Configuration

Dual

Collectoremitter Breakdown Voltage

600V

ECCN Kodu

EAR99

Power Max

250W

Pin Sayısı

3

Max Power Dissipation

250W

Yayın Yılı

2006

Fabrika Tedarik Süresi

22 Weeks

Parça Durumu

Obsolete

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Igbt Type

Trench Field Stop

Additional Feature

AVALANCHE RATED

Pin Sayısı

25

Transistor Application

POWER CONTROL

Montaj

Chassis Mount, Screw

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL

Input

Standard

Turn On Time

170 ns

Ntc Thermistor

Yes

RoHS Durumu

RoHS Compliant

Terminal Pozisyonu

UPPER

Qualification Status

Not Qualified

Jesd30 Code

R-XUFM-X25

Turn Off Timenom Toff

310 ns

Max Collector Current

100A

Montaj Tipi

Chassis Mount

Terminal Sayısı

25

Configuration

Dual Buck Chopper

Collector Emitter Voltage Vceo

1.9V