APTGT75DH120T3G

Specifications

Fabrika Tedarik Süresi

36 Weeks

ECCN Kodu

EAR99

Power Max

357W

Pin Sayısı

16

Voltage Collector Emitter Breakdown Max

1200V

Max Power Dissipation

357W

Maks. Çalışma Sıcaklığı

+ 100 C

Vceon Max Vge Ic

2.1V @ 15V, 75A

Element Configuration

Dual

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-40°C~150°C TJ

Temel Ürün No

APTGT75

Case Connection

ISOLATED

Number Of Elements

2

Currentcollector Ic Max

110 A

Terminal Sayısı

11

Montaj Stili

Chassis Mount

Continuous Collector Current

110

Continuous Collector Current At25 C

110 A

Minimum Operating Temperature

- 40 C

Collectoremitter Saturation Voltage

1.7 V

Montaj

Chassis Mount, Screw

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input

Standard

Collector Emitter Voltage Vceo Max

1.2 kV

Ntc Thermistor

Yes

Yayın Yılı

2012

Ürün Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Igbt Type

Trench Field Stop

Pin Sayısı

25

Transistor Application

POWER CONTROL

Paket

Bulk

Kılıf / Paket

SP3

Lifecycle Status

IN PRODUCTION (Last Updated: 3 weeks ago)

Transistor Element Material

SILICON

Input Capacitance Cies Vce

5.34nF @ 25V

Collectoremitter Breakdown Voltage

1.2kV

Current Collector Cutoff Max

250μA