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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ihs Manufacturer
- MICROSEMI CORP
- Collectoremitter Breakdown Voltage
- 1.7kV
- Kılıf / Paket
- D1
- Transistor Element Material
- SILICON
- Input Capacitance Cies Vce
- 6.5nF @ 25V
- Terminal Formu
- UNSPECIFIED
- Input Capacitance
- 6.5nF
- Current Collector Cutoff Max
- 5mA
- Igbt Type
- Trench Field Stop
- Pin Sayısı
- 7
- Risk Rank
- 5.73
- Turnon Timenom Ton
- 400 ns
- Transistor Application
- POWER CONTROL
- Package Shape
- RECTANGULAR
- Yayın Yılı
- 2012
- Parça Durumu
- Obsolete
- Reflow Temperaturemax S
- NOT SPECIFIED
- Üretici Parça No
- APTGT75DA170D1G
- Ambalaj
- Bulk
- Min. Çalışma Sıcaklığı
- -40°C
- Montaj Tipi
- Chassis Mount
- Terminal Pozisyonu
- UPPER
- Qualification Status
- Not Qualified
- Turn Off Timenom Toff
- 1200 ns
- Max Collector Current
- 120A
- Jesd30 Code
- R-XUFM-X5
- Turn On Time
- 400 ns
- RoHS Durumu
- RoHS Compliant
- Operating Temperaturemax
- 150 °C
- Polaritychannel Type
- N-CHANNEL
- Maks. Çalışma Sıcaklığı
- 150°C
- Collector Emitter Voltage Vceo
- 1.7kV
- Moisture Sensitivity Levels
- 1
- Kurşunsuz Kodu
- yes
- Configuration
- Single
- Vceon Max Vge Ic
- 2.4V @ 15V, 75A
- Turnoff Timenom Toff
- 1200 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- REACH Uyumluluk Kodu
- compliant
- JESD-609 Kodu
- e1
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