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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 1.2kV
- Kurşunsuz Kodu
- yes
- Moisture Sensitivity Levels
- 1
- Tedarikçi Cihaz Paketi
- SP4
- Configuration
- Single
- Power Dissipation
- 357
- Montaj Tipi
- Chassis Mount
- Max Collector Current
- 110A
- Turn Off Timenom Toff
- 610 ns
- Jesd30 Code
- R-XUFM-X12
- Terminal Pozisyonu
- UPPER
- Qualification Status
- Not Qualified
- Turn On Time
- 335 ns
- RoHS Durumu
- RoHS Compliant
- Operating Temperaturemax
- 150 °C
- Polaritychannel Type
- N-CHANNEL
- Pd Power Dissipation
- 357 W
- Igbt Type
- Trench Field Stop
- Additional Feature
- AVALANCHE RATED
- Turnon Timenom Ton
- 335 ns
- Pin Sayısı
- 12
- Risk Rank
- 5.19
- Transistor Application
- POWER CONTROL
- Ürün Durumu
- Active
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Parça Durumu
- Active
- Package Shape
- RECTANGULAR
- Yayın Yılı
- 2006
- Reflow Temperaturemax S
- NOT SPECIFIED
- Üretici Parça No
- APTGT75DA120TG
- Ambalaj
- Tube
- Paket
- Bulk
- Collectoremitter Breakdown Voltage
- 1.2kV
- Ihs Manufacturer
- MICROSEMI CORP
- Transistor Element Material
- SILICON
- Maximum Gate Emitter Voltage
- 20 V
- Input Capacitance Cies Vce
- 5.34nF @ 25V
- Kılıf / Paket
- SP4
- Lifecycle Status
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Input Capacitance
- 5.34nF
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