APTGT75DA120T1G

Specifications

Terminal Formu

THROUGH-HOLE

Input Capacitance

5.34nF

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

unknown

Çalışma Sıcaklığı

-40°C~150°C TJ

JESD-609 Kodu

e1

Current Collector Cutoff Max

250μA

Vceon Max Vge Ic

2.1V @ 15V, 75A

Collectoremitter Breakdown Voltage

1.2kV

Kılıf / Paket

SP1

Input Capacitance Cies Vce

5.34nF @ 25V

Transistor Element Material

SILICON

Max Power Dissipation

357W

Voltage Collector Emitter Breakdown Max

1200V

Power Max

357W

Pin Sayısı

1

Transistor Application

MOTOR CONTROL

Pin Sayısı

12

Igbt Type

Trench Field Stop

Yayın Yılı

2007

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Obsolete

RoHS Durumu

RoHS Compliant

Ntc Thermistor

Yes

Turn On Time

335 ns

Input

Standard

Montaj

Chassis Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL

Montaj Tipi

Chassis Mount

Gateemitter Voltagemax

20V

Qualification Status

Not Qualified

Terminal Pozisyonu

UPPER

Max Collector Current

110A

Turn Off Timenom Toff

610 ns

Configuration

Single

Terminal Sayısı

12

Terminal Kaplaması

TIN SILVER COPPER

Case Connection

ISOLATED

Number Of Elements

1