APTGT75A120TG

Specifications

Configuration

Half Bridge

Terminal Sayısı

12

Collector Emitter Voltage Vceo

2.1V

Number Of Elements

2

Case Connection

ISOLATED

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Montaj

Chassis Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL

Input

Standard

Ntc Thermistor

Yes

Turn On Time

335 ns

RoHS Durumu

RoHS Compliant

Max Collector Current

100A

Turn Off Timenom Toff

610 ns

Jesd30 Code

R-XUFM-X12

Terminal Pozisyonu

UPPER

Qualification Status

Not Qualified

Montaj Tipi

Chassis Mount

Voltage Collector Emitter Breakdown Max

1200V

Power Max

350W

Pin Sayısı

4

Max Power Dissipation

350W

Parça Durumu

Obsolete

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2006

Pin Sayısı

12

Additional Feature

AVALANCHE RATED

Igbt Type

Trench Field Stop

Transistor Application

POWER CONTROL

Current Collector Cutoff Max

250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

unknown

Çalışma Sıcaklığı

-40°C~150°C TJ

JESD-609 Kodu

e1

Input Capacitance

5.34nF

Terminal Formu

UNSPECIFIED

Transistor Element Material

SILICON

Input Capacitance Cies Vce

5.34nF @ 25V

Kılıf / Paket

SP4