APTGT75A120T1G

Specifications

Configuration

Half Bridge

Tedarikçi Cihaz Paketi

SP1

Kurşunsuz Kodu

yes

Collector Emitter Voltage Vceo

2.1V

Pd Power Dissipation

357 W

Polaritychannel Type

N-CHANNEL

RoHS Durumu

RoHS Compliant

Turn On Time

335 ns

Max Collector Current

110A

Turn Off Timenom Toff

610 ns

Qualification Status

Not Qualified

Terminal Pozisyonu

UPPER

Montaj Tipi

Chassis Mount

Gateemitter Voltagemax

20V

Ambalaj

Tube

Paket

Bulk

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Ürün Durumu

Active

Yayın Yılı

2012

Transistor Application

MOTOR CONTROL

Pin Sayısı

12

Igbt Type

Trench Field Stop

Current Collector Cutoff Max

250μA

Input Capacitance

5.34nF

Terminal Formu

THROUGH-HOLE

Maximum Gate Emitter Voltage

20 V

Input Capacitance Cies Vce

5.34nF @ 25V

Transistor Element Material

SILICON

Lifecycle Status

IN PRODUCTION (Last Updated: 3 weeks ago)

Kılıf / Paket

SP1

Collectoremitter Breakdown Voltage

1.2kV

Terminal Sayısı

12

Gateemitter Leakage Current

400 nA

Montaj Stili

Chassis Mount

Currentcollector Ic Max

110 A

Terminal Kaplaması

TIN SILVER COPPER

Number Of Elements

2

Case Connection

ISOLATED

Collector Emitter Voltage Vceo Max

1.2 kV