Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance
- 51nF
- Terminal Formu
- UNSPECIFIED
- Current Collector Cutoff Max
- 1mA
- Collectoremitter Breakdown Voltage
- 1.7kV
- Transistor Element Material
- SILICON
- Maximum Gate Emitter Voltage
- 20 V
- Input Capacitance Cies Vce
- 51nF @ 25V
- Lifecycle Status
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Kılıf / Paket
- D4
- Paket
- Bulk
- Ambalaj
- Bulk
- Igbt Type
- Trench Field Stop
- Additional Feature
- AVALANCHE RATED
- Pin Sayısı
- 4
- Transistor Application
- POWER CONTROL
- Ürün Durumu
- Active
- Parça Durumu
- Active
- Yayın Yılı
- 2012
- Turn On Time
- 430 ns
- RoHS Durumu
- RoHS Compliant
- Polaritychannel Type
- N-CHANNEL
- Pd Power Dissipation
- 2.9 kW
- Gateemitter Voltagemax
- 20V
- Montaj Tipi
- Chassis Mount
- Turn Off Timenom Toff
- 1230 ns
- Max Collector Current
- 1.1kA
- Terminal Pozisyonu
- UPPER
- Tedarikçi Cihaz Paketi
- D4
- Configuration
- Single
- Power Dissipation
- 2.9
- Collector Emitter Voltage Vceo
- 2.4V
- Kurşunsuz Kodu
- yes
- Temel Ürün No
- APTGT600
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- JESD-609 Kodu
- e1
- Vceon Max Vge Ic
- 2.4V @ 15V, 600A
- Maks. Çalışma Sıcaklığı
- + 125 C
- Pin Sayısı
- 4
- Power Max
- 2900W
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