APTGT50X60T3G

Specifications

Power Dissipationmax Abs

176 W

Reflow Temperaturemax S

NOT SPECIFIED

Radyasyon Dayanımı

No

Paket

Bulk

Üretici Parça No

APTGT50X60T3G

Ambalaj

Tube

Igbt Type

Trench Field Stop

Pin Sayısı

25

Risk Rank

5.71

Turnon Timenom Ton

170 ns

Transistor Application

MOTOR CONTROL

Parça Durumu

Active

Ürün Durumu

Active

Package Shape

RECTANGULAR

Yayın Yılı

2007

Input Capacitance

3.15nF

Terminal Formu

UNSPECIFIED

Vcesatmax

1.9 V

Current Collector Cutoff Max

250μA

Ihs Manufacturer

MICROSEMI CORP

Collectoremitter Breakdown Voltage

600V

Transistor Element Material

SILICON

Maximum Gate Emitter Voltage

20 V

Input Capacitance Cies Vce

3.15nF @ 25V

Lifecycle Status

IN PRODUCTION (Last Updated: 3 weeks ago)

Kılıf / Paket

SP3

Tedarikçi Cihaz Paketi

SP3

Configuration

Three Phase Inverter

Power Dissipation

176

Uzunluk

73.4mm

Collector Emitter Voltage Vceo

600V

Kurşunsuz Kodu

yes

Moisture Sensitivity Levels

1

Turn On Time

170 ns

RoHS Durumu

RoHS Compliant

Operating Temperaturemax

175 °C

Polaritychannel Type

N-CHANNEL

Pd Power Dissipation

176 W

Genişlik

40.8mm

Kurşunsuz

Lead Free