Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ürün Durumu
- Active
- Parça Durumu
- Active
- Yayın Yılı
- 2012
- Package Shape
- RECTANGULAR
- Transistor Application
- POWER CONTROL
- Igbt Type
- Trench Field Stop
- Turnon Timenom Ton
- 170 ns
- Risk Rank
- 2.3
- Pin Sayısı
- 12
- Radyasyon Dayanımı
- No
- Min. Çalışma Sıcaklığı
- -40 °C
- Paket
- Bulk
- Üretici Parça No
- APTGT50TL601G
- Ambalaj
- Tube
- Power Dissipationmax Abs
- 176 W
- Input Capacitance Cies Vce
- 3.15nF @ 25V
- Maximum Gate Emitter Voltage
- 20 V
- Transistor Element Material
- SILICON
- Kılıf / Paket
- SP1
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Collectoremitter Breakdown Voltage
- 600V
- Ihs Manufacturer
- MICROSEMI CORP
- Current Collector Cutoff Max
- 250μA
- Input Capacitance
- 3.15nF
- Terminal Formu
- UNSPECIFIED
- Vcesatmax
- 1.9 V
- Collector Emitter Voltage Vceo
- 600V
- Maks. Çalışma Sıcaklığı
- 175 °C
- Configuration
- Three Level Inverter
- Tedarikçi Cihaz Paketi
- SP1
- Jesd30 Code
- R-XUFM-X10
- Turn Off Timenom Toff
- 310 ns
- Max Collector Current
- 80A
- Qualification Status
- Not Qualified
- Terminal Pozisyonu
- UPPER
- Montaj Tipi
- Chassis Mount
- Gateemitter Voltagemax
- 20V
- Pd Power Dissipation
- 176 W
- Polaritychannel Type
- N-CHANNEL
- Operating Temperaturemax
- 175 °C
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