Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Formu
- UNSPECIFIED
- Input Capacitance
- 3.15nF
- Current Collector Cutoff Max
- 250μA
- Collectoremitter Breakdown Voltage
- 600V
- Kılıf / Paket
- SP3
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Input Capacitance Cies Vce
- 3.15nF @ 25V
- Maximum Gate Emitter Voltage
- 20 V
- Transistor Element Material
- SILICON
- Paket
- Bulk
- Ambalaj
- Bulk
- Radyasyon Dayanımı
- No
- Min. Çalışma Sıcaklığı
- -40 °C
- Transistor Application
- POWER CONTROL
- Pin Sayısı
- 25
- Additional Feature
- AVALANCHE RATED
- Igbt Type
- Trench Field Stop
- Yayın Yılı
- 2006
- Parça Durumu
- Active
- Ürün Durumu
- Active
- RoHS Durumu
- RoHS Compliant
- Turn On Time
- 170 ns
- Pd Power Dissipation
- 176 W
- Polaritychannel Type
- N-CHANNEL
- Montaj Tipi
- Chassis Mount
- Terminal Pozisyonu
- UPPER
- Max Collector Current
- 80A
- Turn Off Timenom Toff
- 310 ns
- Jesd30 Code
- R-XUFM-X25
- Tedarikçi Cihaz Paketi
- SP3
- Configuration
- Full Bridge Inverter
- Maks. Çalışma Sıcaklığı
- 175 °C
- Kurşunsuz Kodu
- yes
- Collector Emitter Voltage Vceo
- 600V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -40°C~175°C TJ
- JESD-609 Kodu
- e1
- Temel Ürün No
- APTGT50
- Vceon Max Vge Ic
- 1.9V @ 15V, 50A
- Max Power Dissipation
- 176W
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