APTGT50DU120TG

Specifications

Element Configuration

Dual

Vceon Max Vge Ic

2.1V @ 15V, 50A

Temel Ürün No

APTGT50

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-40°C~150°C TJ

JESD-609 Kodu

e1

Fabrika Tedarik Süresi

36 Weeks

ECCN Kodu

EAR99

Maks. Çalışma Sıcaklığı

+ 100 C

Max Power Dissipation

277W

Fabrika Paket Adedi

1

Pin Sayısı

20

Power Max

277W

Voltage Collector Emitter Breakdown Max

1200V

Continuous Collector Current At25 C

75 A

Continuous Collector Current

75

Birim Ağırlık

3.880136 oz

Collectoremitter Saturation Voltage

1.7 V

Minimum Operating Temperature

- 40 C

Collector Emitter Voltage Vceo Max

1.2 kV

Input

Standard

Montaj

Chassis Mount, Screw

RoHS

Details

Ntc Thermistor

Yes

Currentcollector Ic Max

75 A

Terminal Kaplaması

TIN SILVER COPPER

Number Of Elements

2

Case Connection

ISOLATED

Terminal Sayısı

12

Gateemitter Leakage Current

400 nA

Montaj Stili

Chassis Mount

Maximum Gate Emitter Voltage

20 V

Input Capacitance Cies Vce

3.6nF @ 25V

Transistor Element Material

SILICON

Lifecycle Status

Production (Last Updated: 2 months ago)

Kılıf / Paket

SP4

Collectoremitter Breakdown Voltage

1.2kV

Current Collector Cutoff Max

250μA

Input Capacitance

3.6nF

Terminal Formu

UNSPECIFIED