APTGT50A60T1G

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Obsolete

Yayın Yılı

2007

Igbt Type

Trench Field Stop

Pin Sayısı

12

Transistor Application

MOTOR CONTROL

Pin Sayısı

1

Power Max

176W

Max Power Dissipation

176W

Transistor Element Material

SILICON

Input Capacitance Cies Vce

3.15nF @ 25V

Kılıf / Paket

SP1

Element Configuration

Dual

Collectoremitter Breakdown Voltage

600V

Vceon Max Vge Ic

1.9V @ 15V, 50A

Current Collector Cutoff Max

250μA

JESD-609 Kodu

e1

Çalışma Sıcaklığı

-40°C~175°C TJ

REACH Uyumluluk Kodu

unknown

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance

3.15nF

Terminal Formu

THROUGH-HOLE

Collector Emitter Voltage Vceo

1.9V

Number Of Elements

2

Case Connection

ISOLATED

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Sayısı

12

Configuration

Half Bridge

Max Collector Current

80A

Turn Off Timenom Toff

310 ns

Terminal Pozisyonu

UPPER

Qualification Status

Not Qualified

Montaj Tipi

Chassis Mount

Gateemitter Voltagemax

20V

Polaritychannel Type

N-CHANNEL

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Chassis Mount

Input

Standard

Turn On Time

170 ns

Ntc Thermistor

Yes