Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance
- 4.4nF
- Terminal Formu
- THROUGH-HOLE
- Current Collector Cutoff Max
- 250μA
- Collectoremitter Breakdown Voltage
- 1.7kV
- Maximum Gate Emitter Voltage
- 20 V
- Input Capacitance Cies Vce
- 4.4nF @ 25V
- Transistor Element Material
- SILICON
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Kılıf / Paket
- SP1
- Radyasyon Dayanımı
- No
- Ambalaj
- Tube
- Paket
- Bulk
- Transistor Application
- MOTOR CONTROL
- Pin Sayısı
- 12
- Igbt Type
- Trench Field Stop
- Parça Durumu
- Active
- Ürün Durumu
- Active
- Yayın Yılı
- 2012
- RoHS Durumu
- RoHS Compliant
- Turn On Time
- 450 ns
- Pd Power Dissipation
- 312 W
- Polaritychannel Type
- N-CHANNEL
- Montaj Tipi
- Chassis Mount
- Gateemitter Voltagemax
- 20V
- Turn Off Timenom Toff
- 1100 ns
- Max Collector Current
- 75A
- Terminal Pozisyonu
- UPPER
- Tedarikçi Cihaz Paketi
- SP1
- Configuration
- Half Bridge
- Kurşunsuz Kodu
- yes
- Collector Emitter Voltage Vceo
- 2.4V
- Temel Ürün No
- APTGT50
- JESD-609 Kodu
- e1
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Element Configuration
- Dual
- Vceon Max Vge Ic
- 2.4V @ 15V, 50A
- Maks. Çalışma Sıcaklığı
- + 100 C
- Fabrika Paket Adedi
- 1
- Max Power Dissipation
- 312W
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