Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- SP1
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Transistor Element Material
- SILICON
- Maximum Gate Emitter Voltage
- 20 V
- Input Capacitance Cies Vce
- 3.6nF @ 25V
- Collectoremitter Breakdown Voltage
- 1.2kV
- Current Collector Cutoff Max
- 250μA
- Terminal Formu
- THROUGH-HOLE
- Input Capacitance
- 3.6nF
- Yayın Yılı
- 2012
- Ürün Durumu
- Active
- Parça Durumu
- Active
- Igbt Type
- Trench Field Stop
- Technology
- Si
- Pin Sayısı
- 12
- Transistor Application
- MOTOR CONTROL
- Ambalaj
- Tube
- Paket
- Bulk
- Radyasyon Dayanımı
- No
- Terminal Pozisyonu
- UPPER
- Turn Off Timenom Toff
- 610 ns
- Max Collector Current
- 75A
- Gateemitter Voltagemax
- 20V
- Montaj Tipi
- Chassis Mount
- Polaritychannel Type
- N-CHANNEL
- Pd Power Dissipation
- 277 W
- Turn On Time
- 140 ns
- RoHS Durumu
- RoHS Compliant
- Collector Emitter Voltage Vceo
- 2.1V
- Kurşunsuz Kodu
- yes
- Configuration
- Half Bridge
- Tedarikçi Cihaz Paketi
- SP1
- Vceon Max Vge Ic
- 2.1V @ 15V, 50A
- Element Configuration
- Dual
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- JESD-609 Kodu
- e1
- Temel Ürün No
- APTGT50
- Fabrika Tedarik Süresi
- 36 Weeks
- Ürün Tipi
- IGBT Modules
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