APTGT35A120T1G

Specifications

Element Configuration

Dual

Vceon Max Vge Ic

2.1V @ 15V, 35A

Temel Ürün No

APTGT35

JESD-609 Kodu

e1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-40°C~150°C TJ

Fabrika Tedarik Süresi

36 Weeks

ECCN Kodu

EAR99

Maks. Çalışma Sıcaklığı

+ 100 C

Max Power Dissipation

208W

Fabrika Paket Adedi

1

Pin Sayısı

1

Voltage Collector Emitter Breakdown Max

1200V

Power Max

208W

Continuous Collector Current At25 C

55 A

Continuous Collector Current

55

Birim Ağırlık

2.821917 oz

Collectoremitter Saturation Voltage

1.7 V

Minimum Operating Temperature

- 40 C

Collector Emitter Voltage Vceo Max

1200 V

Input

Standard

RoHS

Details

Montaj

Chassis Mount, Screw

Ntc Thermistor

Yes

Currentcollector Ic Max

55 A

Terminal Kaplaması

TIN SILVER COPPER

Number Of Elements

2

Case Connection

ISOLATED

Terminal Sayısı

12

Gateemitter Leakage Current

400 nA

Montaj Stili

Chassis Mount

Input Capacitance Cies Vce

2.5nF @ 25V

Maximum Gate Emitter Voltage

20 V

Transistor Element Material

SILICON

Kılıf / Paket

SP1

Lifecycle Status

Production (Last Updated: 2 months ago)

Collectoremitter Breakdown Voltage

1.2kV

Current Collector Cutoff Max

250μA

Input Capacitance

2.5nF

Terminal Formu

THROUGH-HOLE