APTGT30H170T3G

Specifications

Vceon Max Vge Ic

2.4V @ 15V, 30A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-40°C~150°C TJ

JESD-609 Kodu

e1

Temel Ürün No

APTGT30

Fabrika Tedarik Süresi

36 Weeks

ECCN Kodu

EAR99

Pin Sayısı

32

Voltage Collector Emitter Breakdown Max

1700V

Power Max

210W

Max Power Dissipation

210W

Fabrika Paket Adedi

1

Maks. Çalışma Sıcaklığı

+ 100 C

Continuous Collector Current

45

Continuous Collector Current At25 C

45 A

Minimum Operating Temperature

- 40 C

Collectoremitter Saturation Voltage

2 V

RoHS

Details

Montaj

Chassis Mount, Screw

Input

Standard

Collector Emitter Voltage Vceo Max

1.7 kV

Ntc Thermistor

Yes

Number Of Elements

4

Case Connection

ISOLATED

Currentcollector Ic Max

45 A

Terminal Kaplaması

TIN SILVER COPPER

Terminal Sayısı

25

Montaj Stili

Chassis Mount

Gateemitter Leakage Current

600 nA

Kılıf / Paket

SP3

Lifecycle Status

Production (Last Updated: 2 months ago)

Transistor Element Material

SILICON

Input Capacitance Cies Vce

2.5nF @ 25V

Maximum Gate Emitter Voltage

20 V

Collectoremitter Breakdown Voltage

1.7kV

Current Collector Cutoff Max

250μA

Terminal Formu

UNSPECIFIED

Input Capacitance

2.5nF

Yayın Yılı

2006

Parça Durumu

Active