APTGT30A170T1G

Specifications

Element Configuration

Dual

Vceon Max Vge Ic

2.4V @ 15V, 30A

Temel Ürün No

APTGT30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-40°C~150°C TJ

JESD-609 Kodu

e1

Fabrika Tedarik Süresi

36 Weeks

ECCN Kodu

EAR99

Maks. Çalışma Sıcaklığı

+ 100 C

Voltage Collector Emitter Breakdown Max

1700V

Power Max

210W

Pin Sayısı

1

Fabrika Paket Adedi

1

Max Power Dissipation

210W

Continuous Collector Current At25 C

45 A

Birim Ağırlık

2.821917 oz

Continuous Collector Current

45

Collectoremitter Saturation Voltage

2 V

Minimum Operating Temperature

- 40 C

Collector Emitter Voltage Vceo Max

1.7 kV

Montaj

Chassis Mount, Screw

RoHS

Details

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input

Standard

Ntc Thermistor

Yes

Case Connection

ISOLATED

Number Of Elements

2

Currentcollector Ic Max

45 A

Terminal Kaplaması

TIN SILVER COPPER

Terminal Sayısı

12

Gateemitter Leakage Current

600 nA

Montaj Stili

Chassis Mount

Transistor Element Material

SILICON

Maximum Gate Emitter Voltage

20 V

Input Capacitance Cies Vce

2.5nF @ 25V

Lifecycle Status

Production (Last Updated: 2 months ago)

Kılıf / Paket

SP1

Collectoremitter Breakdown Voltage

1.7kV

Current Collector Cutoff Max

250μA

Input Capacitance

2.5nF