Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vcesatmax
- 1.9 V
- Terminal Formu
- UNSPECIFIED
- Input Capacitance
- 12.2nF
- Current Collector Cutoff Max
- 350μA
- Collectoremitter Breakdown Voltage
- 600V
- Kılıf / Paket
- SP6
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Transistor Element Material
- SILICON
- Input Capacitance Cies Vce
- 12.2nF @ 25V
- Maximum Gate Emitter Voltage
- 20 V
- Paket
- Bulk
- Ambalaj
- Tube
- Min. Çalışma Sıcaklığı
- -40 °C
- Radyasyon Dayanımı
- No
- Igbt Type
- Trench Field Stop
- Pin Sayısı
- 12
- Transistor Application
- POWER CONTROL
- Ürün Durumu
- Active
- Parça Durumu
- Active
- Turn On Time
- 180 ns
- RoHS Durumu
- RoHS Compliant
- Polaritychannel Type
- N-CHANNEL
- Pd Power Dissipation
- 652 W
- Gateemitter Voltagemax
- 20V
- Montaj Tipi
- Chassis Mount
- Kurşunsuz
- Lead Free
- Terminal Pozisyonu
- UPPER
- Max Collector Current
- 300A
- Turn Off Timenom Toff
- 370 ns
- Tedarikçi Cihaz Paketi
- SP6
- Configuration
- Three Level Inverter
- Maks. Çalışma Sıcaklığı
- 175 °C
- Collector Emitter Voltage Vceo
- 600V
- Turn On Delay Time
- 115 ns
- Çalışma Sıcaklığı
- -40°C~175°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Temel Ürün No
- APTGT200
- Vceon Max Vge Ic
- 1.9V @ 15V, 200A
- Voltage Collector Emitter Breakdown Max
- 600 V
- Pin Sayısı
- 12
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