Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input
- Standard
- Max Collector Current
- 280A
- Currentcollector Ic Max
- 280 A
- Ürün Durumu
- Active
- Kılıf / Paket
- SP6
- Birim Ağırlık
- 3.880136 oz
- Collector Emitter Voltage Vceo Max
- 1.2 kV
- Terminal Kaplaması
- TIN SILVER COPPER
- Temel Ürün No
- APTGT200
- Gateemitter Leakage Current
- 500 nA
- Input Capacitance Cies Vce
- 14nF @ 25V
- Kurşunsuz Kodu
- yes
- Terminal Pozisyonu
- UPPER
- Pd Power Dissipation
- 890 W
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 36 Weeks
- ECCN Kodu
- EAR99
- Power Max
- 890W
- Configuration
- Asymmetrical Bridge
- Min. Çalışma Sıcaklığı
- -40 °C
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Transistor Element Material
- SILICON
- Additional Feature
- AVALANCHE RATED
- Minimum Operating Temperature
- - 40 C
- Continuous Collector Current At25 C
- 280 A
- Terminal Sayısı
- 8
- Input Capacitance
- 14nF
- Voltage Collector Emitter Breakdown Max
- 1200V
- Fabrika Paket Adedi
- 1
- Turn Off Timenom Toff
- 610 ns
- Element Configuration
- Dual
- Turn On Time
- 340 ns
- Pin Sayısı
- 8
- RoHS
- Details
- Maks. Çalışma Sıcaklığı
- 150 °C
- Collectoremitter Breakdown Voltage
- 1.2kV
- Igbt Type
- Trench Field Stop
- Max Power Dissipation
- 890W
- Case Connection
- ISOLATED
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