APTGT200A60TG

Specifications

Additional Feature

AVALANCHE RATED

Number Of Elements

2

Transistor Application

POWER CONTROL

Turn Off Timenom Toff

370 ns

Qualification Status

Not Qualified

Ntc Thermistor

Yes

Collector Emitter Voltage Vceo

1.9V

Input Capacitance

12.3nF

Terminal Sayısı

12

Jesd30 Code

R-XUFM-X12

JESD-609 Kodu

e1

Parça Durumu

Discontinued

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-40°C~175°C TJ

Terminal Formu

UNSPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Max

625W

Montaj

Chassis Mount

Vceon Max Vge Ic

1.9V @ 15V, 200A

Configuration

Half Bridge

Current Collector Cutoff Max

250μA

Case Connection

ISOLATED

Terminal Pozisyonu

UPPER

Max Power Dissipation

625W

Montaj Tipi

Chassis Mount

Polaritychannel Type

N-CHANNEL

Pin Sayısı

12

RoHS Durumu

RoHS Compliant

Yayın Yılı

2006

Pin Sayısı

4

Kılıf / Paket

SP4

RoHS

Compliant

Input

Standard

Turn On Time

180 ns

Max Collector Current

290A

Input Capacitance Cies Vce

12.3nF @ 25V

Collectoremitter Breakdown Voltage

600V

Igbt Type

Trench Field Stop