APTGT200A120G

Specifications

Input Capacitance Cies Vce

14nF @ 25V

Gateemitter Leakage Current

500 nA

Kurşunsuz Kodu

yes

Package Body Material

UNSPECIFIED

Collector Emitter Voltage Vceo Max

1200 V

Terminal Kaplaması

TIN SILVER COPPER

Temel Ürün No

APTGT200

Ürün Durumu

Active

Birim Ağırlık

3.880136 oz

Kılıf / Paket

SP6

Max Collector Current

280A

Input

Standard

Currentcollector Ic Max

280 A

Yüzey Montaj

NO

Ambalaj

Tube

Operating Temperaturemax

150 °C

Rohs Code

Yes

Pd Power Dissipation

890 W

Terminal Pozisyonu

UPPER

Reflow Temperaturemax S

NOT SPECIFIED

Çalışma Sıcaklığı

-40°C~150°C TJ

Part Life Cycle Code

Active

Transistor Element Material

SILICON

Power Max

890W

Configuration

Half Bridge

ECCN Kodu

EAR99

Moisture Sensitivity Levels

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

36 Weeks

Turn Off Timenom Toff

610 ns

Ihs Manufacturer

MICROSEMI CORP

Minimum Operating Temperature

- 40 C

Continuous Collector Current At25 C

280 A

Package Style

FLANGE MOUNT

Terminal Sayısı

7

Input Capacitance

14nF

Voltage Collector Emitter Breakdown Max

1200V

Jesd30 Code

R-XUFM-X7

Fabrika Paket Adedi

1

REACH Uyumluluk Kodu

compliant