APTGT100DU60TG

Specifications

Gateemitter Leakage Current

400 nA

Input Capacitance Cies Vce

6.1nF @ 25V

Kurşunsuz Kodu

yes

Terminal Kaplaması

TIN SILVER COPPER

Collector Emitter Voltage Vceo Max

600 V

Temel Ürün No

APTGT100

Ürün Durumu

Active

Kılıf / Paket

SP4

Vcesatmax

1.9 V

Birim Ağırlık

3.880136 oz

Input

Standard

Max Collector Current

150A

Currentcollector Ic Max

150 A

Ambalaj

Tube

Pd Power Dissipation

340 W

Terminal Pozisyonu

UPPER

Çalışma Sıcaklığı

-40°C~175°C TJ

Transistor Element Material

SILICON

Power Max

340W

Configuration

Dual, Common Source

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

36 Weeks

Turn Off Timenom Toff

370 ns

Minimum Operating Temperature

- 40 C

Continuous Collector Current At25 C

150 A

Voltage Collector Emitter Breakdown Max

600 V

Fabrika Paket Adedi

1

Input Capacitance

6.1nF

Terminal Sayısı

12

Jesd30 Code

R-XUFM-X12

Additional Feature

AVALANCHE RATED

Power Dissipation

340

Collectoremitter Breakdown Voltage

600V

Igbt Type

Trench Field Stop

Pin Sayısı

20

RoHS

Details

Element Configuration

Dual

Turn On Time

180 ns

Montaj Tipi

Chassis Mount