APTGLQ150A120TG

Specifications

Input Capacitance Cies Vce

8.8nF @ 25V

Gateemitter Leakage Current

240 nA

Temel Ürün No

APTGLQ150

Collector Emitter Voltage Vceo Max

1200 V

Package Body Material

UNSPECIFIED

Kılıf / Paket

Module

Vcesatmax

2.4 V

Birim Ağırlık

3.880136 oz

Ürün Durumu

Active

Operating Temperaturemin

-40 °C

Yüzey Montaj

NO

Currentcollector Ic Max

250A

Input

Standard

Ambalaj

Tube

Operating Temperaturemax

175 °C

Pd Power Dissipation

750 W

Rohs Code

Yes

Terminal Pozisyonu

UPPER

Çalışma Sıcaklığı

-40°C~175°C TJ

Part Life Cycle Code

Active

Transistor Element Material

SILICON

Configuration

Half Bridge

Gateemitter Voltagemax

20 V

Power Max

750W

Fabrika Tedarik Süresi

36 Weeks

Ihs Manufacturer

MICROSEMI CORP

Fabrika Paket Adedi

1

Voltage Collector Emitter Breakdown Max

1200V

Jesd30 Code

R-XUFM-X10

Package Style

FLANGE MOUNT

Continuous Collector Current At25 C

250 A

Minimum Operating Temperature

- 40 C

REACH Uyumluluk Kodu

compliant

Igbt Type

Trench Field Stop

Üretici Parça No

APTGLQ150A120TG

Package Shape

RECTANGULAR

Number Of Terminals

10

Collectoremitter Voltagemax

1200 V

Turnon Timenom Ton

79 ns

Polaritychannel Type

N-CHANNEL