APTGLQ100H65T3G

Specifications

Collectoremitter Saturation Voltage

1.85 V

Çalışma Sıcaklığı

-40°C~175°C TJ

Configuration

Full Bridge

Vceon Max Vge Ic

2.3V @ 15V, 100A

Power Max

350W

Parça Durumu

Active

Paket

Bulk

Fabrika Tedarik Süresi

36 Weeks

Fabrika Paket Adedi

1

Voltage Collector Emitter Breakdown Max

650V

Ntc Thermistor

Yes

Minimum Operating Temperature

- 40 C

Continuous Collector Current At25 C

135 A

Montaj Stili

Chassis Mount

Igbt Type

Trench Field Stop

Gateemitter Leakage Current

150 nA

Input Capacitance Cies Vce

6.15nF @ 25V

Temel Ürün No

APTGLQ100

Collector Emitter Voltage Vceo Max

650 V

Birim Ağırlık

3.880136 oz

Kılıf / Paket

Module

Ürün Durumu

Active

Currentcollector Ic Max

135A

Technology

Si

Input

Standard

Ambalaj

Tube

Montaj Tipi

Chassis Mount

Ürün Tipi

IGBT Modules

RoHS Durumu

RoHS Compliant

Maximum Gate Emitter Voltage

20 V

Tedarikçi Cihaz Paketi

SP3F

Maks. Çalışma Sıcaklığı

+ 125 C

Pd Power Dissipation

350 W

Current Collector Cutoff Max

50μA