APTGL60TL120T3G

Specifications

Ambalaj

Tube

Terminal Pozisyonu

UPPER

Pd Power Dissipation

280 W

Collector Emitter Voltage Vceo Max

1.2 kV

Temel Ürün No

APTGL60

Gateemitter Leakage Current

400 nA

Input Capacitance Cies Vce

2.77nF @ 25V

Max Collector Current

80A

Input

Standard

Currentcollector Ic Max

80 A

Ürün Durumu

Active

Vcesatmax

2.2 V

Kılıf / Paket

SP3

Continuous Collector Current At25 C

80 A

Minimum Operating Temperature

- 40 C

Fabrika Paket Adedi

1

Voltage Collector Emitter Breakdown Max

1200V

Input Capacitance

2.77nF

Terminal Sayısı

16

Jesd30 Code

R-XUFM-X16

Turn Off Timenom Toff

370 ns

Power Max

280W

Gateemitter Voltagemax

20V

Configuration

Three Level Inverter

Min. Çalışma Sıcaklığı

-40 °C

Çalışma Sıcaklığı

-40°C~175°C TJ

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

36 Weeks

ECCN Kodu

EAR99

Pin Sayısı

25

RoHS Durumu

RoHS Compliant

Maximum Gate Emitter Voltage

20 V

Yayın Yılı

2012

Montaj Tipi

Chassis Mount

Polaritychannel Type

N-CHANNEL

Lifecycle Status

Production (Last Updated: 1 month ago)

Max Power Dissipation

280W

Current Collector Cutoff Max

1mA

Case Connection

ISOLATED