APTGL180A120T3AG

Specifications

Power Max

940W

Gateemitter Voltagemax

20 V

Min. Çalışma Sıcaklığı

-40 °C

Configuration

Half Bridge

Transistor Element Material

SILICON

Part Life Cycle Code

Active

Çalışma Sıcaklığı

-40°C~175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

36 Weeks

ECCN Kodu

EAR99

Continuous Collector Current At25 C

230 A

Minimum Operating Temperature

- 40 C

Package Style

FLANGE MOUNT

Fabrika Paket Adedi

1

Jesd30 Code

R-XUFM-X20

Voltage Collector Emitter Breakdown Max

1200V

Input Capacitance

9.3nF

Terminal Sayısı

20

Turn Off Timenom Toff

430 ns

Ihs Manufacturer

MICROSEMI CORP

REACH Uyumluluk Kodu

compliant

Package Body Material

UNSPECIFIED

Collector Emitter Voltage Vceo Max

1.2 kV

Temel Ürün No

APTGL180

Gateemitter Leakage Current

200 nA

Input Capacitance Cies Vce

9.3nF @ 25V

Max Collector Current

230A

Input

Standard

Currentcollector Ic Max

230 A

Yüzey Montaj

NO

Ürün Durumu

Active

Vcesatmax

2.2 V

Kılıf / Paket

SP3

Ambalaj

Tube

Terminal Pozisyonu

UPPER

Reflow Temperaturemax S

NOT SPECIFIED

Operating Temperaturemax

175 °C

Pd Power Dissipation

940 W

Rohs Code

Yes

Collector Currentmax Ic

230 A